AON1610 Datasheet | Alpha & Omega Semiconductors

Description Product Summary The AON1610 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V) RDS(ON) (at VGS =1.5V) Typical ESD protection 20V 4A < 29mΩ < 34mΩ < 44mΩ < 60mΩ HBM Class 2 DFN 1.6x1.6A Top View Bottom View Pin 1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TA=25°C TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 4 3 16 1.8 1.15 -55 to 150 Thermal Characteristics Parameter Symbol Typ...