Datasheet Details
| Part number | AON1606 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.98 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON1606-AlphaOmegaSemiconductors.pdf |
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Overview: AON1606 20V N-Channel MOSFET General.
| Part number | AON1606 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.98 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON1606-AlphaOmegaSemiconductors.pdf |
|
|
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The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package.
This device is ideal for load switch applications.
Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V) Typical ESD protection 20V 0.7A < 275mW < 335mW < 390mW HBM Class 1C DFN 1.0x0.6 Top View Bottom View G S D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current E TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 0.7 0.55 2.8 0.9 0.55 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RqJA 80 110 Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B t ≤ 10s Steady-State RqJA 200 280 Max 100 140 245 340 Units V V A A W °C Units °C/W °C/W °C/W °C/W Rev.2.2: February 2024 .aosmd.
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