AON2409
Description
Product Summary
- The AON2409 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
- Ro HS and Halogen-Free pliant
VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V)
-30V -8A < 32mΩ < 53mΩ
Top View
DFN 2x2B
Bottom View
Pin 1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current G
TA=25°C TA=70°C
Pulsed Drain Current C
TA=25°C Power Dissipation A TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±20 -8 -6.3 -32 2.8 1.8
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State
Symbol RθJA
Typ 37 66
Max 44 79
Units V V...
