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AON6442 Datasheet 40v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON6442 40V N-Channel MOSFET General.

General Description

The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.

In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 32A < 4.8mW < 7mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 32 25 168 22 18 40 80 35.7 14 4.2 2.7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 25 55 Maximum Junction-to-Case Steady-State RqJC 2.6 Max 30 65 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0 : September 2023 .aosmd.

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