Datasheet Details
| Part number | AON6400 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.51 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6400_AlphaOmegaSemiconductors.pdf |
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Overview: AON6400 30V N-Channel MOSFET General.
| Part number | AON6400 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.51 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6400_AlphaOmegaSemiconductors.pdf |
|
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|
The AON6400 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 1.4mΩ < 1.8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G PIN1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 85 67 400 31 25 90 405 83 33 2.3 1.45 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 1 : November 2010 .aosmd.
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