Datasheet Details
| Part number | AON6404A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 189.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6404A_AlphaOmegaSemiconductors.pdf |
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Overview: AON6404A 30V N-Channel MOSFET General.
| Part number | AON6404A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 189.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6404A_AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AON6404A bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protected 100% UIS Tested 100% Rg Tested 30V 85A < 2.3mΩ < 3.0mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Maximum 30 ±20 85 67 280 25 19 60 180 83 33 2.3 1.4 -55 to 150 Typ Max 14 17 40 55 0.85 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: November 2013 .aosmd.
| Part Number | Description |
|---|---|
| AON6404 | N-Channel MOSFET |
| AON6404L | N-Channel MOSFET |
| AON6400 | N-Channel MOSFET |
| AON6403 | 30V P-Channel MOSFET |
| AON6403L | N-Channel MOSFET |
| AON6405 | 30V P-Channel MOSFET |
| AON6405L | N-Channel MOSFET |
| AON6406 | 30V N-Channel MOSFET |
| AON6407 | 30V P-Channel MOSFET |
| AON6408 | N-Channel MOSFET |