AON7200
Description
The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low bination of RDS(ON) and Crss.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
30V 40A < 8mΩ < 11mΩ
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
18 27 36 45
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1m H C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 40 31 146 15.8 12.7 28 39 62 25 3.1...
