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AA026P2-00 - 23.5-26.5 GHz GaAs MMIC Power Amplifier

Description

Alpha’s three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz.

The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

Features

  • I Single Bias Supply Operation (6 V) I 17 dB Typical Small Signal Gain I 24 dBm Typical P1 dB Output Power at 26.5 GHz I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD MT 2010 0.130 1.014 Chip Outline 3.080 2.960 2.068.

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Datasheet Details

Part number AA026P2-00
Manufacturer Alpha Industries
File Size 170.73 KB
Description 23.5-26.5 GHz GaAs MMIC Power Amplifier
Datasheet download datasheet AA026P2-00 Datasheet

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Full PDF Text Transcription

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23.5–26.5 GHz GaAs MMIC Power Amplifier AA026P2-00 Features I Single Bias Supply Operation (6 V) I 17 dB Typical Small Signal Gain I 24 dBm Typical P1 dB Output Power at 26.5 GHz I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD MT 2010 0.130 1.014 Chip Outline 3.080 2.960 2.068 Description Alpha’s three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
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