Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

GaAs SPST High Isolation Terminated Switch 0.5 - 2.0 GHz Features • • • • • Terminated RF Output High Isolation: 42 dB up to 2.0 GHz Single Positive C

www.DataSheet4U.com

MICROWAVE CORPORATION v02.1202 HMC364 GaAs HBT MMIC DIVIDE-BY-2, DC - 13.0 GHz Features Ultra Low SSB Phase Noise: -145 dBc/Hz Wide Bandwidth Output

v04.1217 HMC409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Amplifiers - Linear & Power - SMT Typical Applications This amplifier is i

CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

Product Description Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active

LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

www.DataSheet4U.com 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1004 Chip Device Layout Features Balanced Design Excellen

MULTIPLIERS - ACTIVE - SMT v02.0514 HMC576LC3B SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Typical Applications The HMC576LC3B

www.DataSheet4U.com 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1001 Chip Device Layout Features Balanced Design Excell

SWITCHES - MULTI-THROW - SMT HMC245AQS16 / 245AQS16E v00.1213 GaAs MMIC SP3T Non-REFLECTIVE SWITCH, DC - 3.5 GHz Typical Applications The HMC245AQ

v00.0301 MICROWAVE CORPORATION HMC342 GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Features Noise Figure : 3.5 dB Gain: 20 dB Single Supply : +3V @ 36

SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-ch

SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is a

www.DataSheet4U.com Matched GaAs SPST Switch DC - 3 GHz Features q q q SW-209 V 2.00 CR-3 Fast Switching Speed, 6 ns Typical Ultra Low DC Power Co

GaAs SPDT Terminated Switch DC - 2.5 GHz SW-337, SW-338, SW-339 V2.00 Features q q q SO-8 PIN 8 .1497-.1574 (3.80-4.00) -B.2284-.2440 (5.80-6.20) .

50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features:  High reliability, Ultra low dark curre