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Infrared Light Emitting Diodes
LNA2603F
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5±0.2
Features
High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package
3.9±0.25
4.5±0.15 3.5±0.15
2.1±0.15 1.6±0.15 0.8±0.1
12.8 min.
(2.95)
2-1.2±0.3 2-0.45±0.15
0.45±0.15
1
2.54 2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP
*
Ratings 160 100 1.5 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C
1: Anode 2: Cathode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.
LNA2603F Datasheet
