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Infrared Light Emitting Diodes
LNA2606L
GaAlAs on GaAs Infrared Light Emitting Diode
Unit: mm
0.8 max.
For optical control systems s Features
• High-power output, high-efficiency: PO = 9 mW min. • Emitted light spectrum suited for silicon photodetectors • Ultra-miniature, thin side-view type package • Long lifetime, high reliability
1.95±0.25 3.0±0.3
0.8
φ1.1 R0.5
1.4±0.2 0.9 0.5
3.5±0.3 12 min.
2.4 1.1 Not soldered 2.15 max.
1.1
2− 0.5±0.15
0.3±0.15
s Absolute Maximum Ratings Ta = 25°C
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
2
1 2.
LNA2606L Datasheet
