LNA2606L Description
Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: For optical control systems.
LNA2606L Key Features
- High-power output, high-efficiency: PO = 9 mW min
- Emitted light spectrum suited for silicon photodetectors
- Ultra-miniature, thin side-view type package
- Long lifetime, high reliability