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Infrared Light Emitting Diodes
LNA2801L
GaAlAs on GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (1.5) 1 2.54 1.6
For optical control systems
5.5±0.2 1.0 15.5±1.0 1.0 4.5±0.3
ø3.6±0.2 ø3.0±0.2
Features
High-power output, high-efficiency : Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C
1: Anode 2: Cathode
f = 100 Hz, Duty cycle = 0.
LNA2801L Datasheet
