LNA2802L - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LNA2802L
Manufacturer	Panasonic Semiconductor
File Size	40.41 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LNA2802L Datasheet
Additional preview pages of the LNA2802L datasheet.

High-power output, high-efficiency : PO = 5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 75 50 1 3.
25.

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Published: Mar 22, 2005 |