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Infrared Light Emitting Diodes
LNA2802L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max.
2-0.8 max. 2-0.5±0.1 0.5±0.1
For optical control systems Features
High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package
(1.5)
ø3.8±0.2 ø3.0±0.2
1.0
2.54
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C
1.7
Absolute Maximum Ratings (Ta = 25˚C)
15.0±1.0 4.5±0.3
5.0±0.2 0.
LNA2802L Datasheet
