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LNA2701L - GaAs Bi-directional Infrared Light Emitting Diode

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Features

  • Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min. ) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.8±0.2 2-C0.5 8˚ 26 .5 ˚ 3.8±0.2 2.4±0.2 0.8 ø1.4±0.2 8˚ 8˚ 1.0 26 .5˚ 16.9±1.0 Not soldered 2.0 0.8 2.8±0.2 1.3±0.2 8˚ 2-R0.7 8˚ 0.15 2-0.7 max. 2-0.5±0.1 (1.5).

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Datasheet Details

Part number LNA2701L
Manufacturer Panasonic Semiconductor
File Size 43.97 KB
Description GaAs Bi-directional Infrared Light Emitting Diode
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Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light source of VCR (VHS System) 0.5 max. Features Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.8±0.2 2-C0.5 8˚ 26 .5 ˚ 3.8±0.2 2.4±0.2 0.8 ø1.4±0.2 8˚ 8˚ 1.0 26 .5˚ 16.9±1.0 Not soldered 2.0 0.8 2.8±0.2 1.3±0.2 8˚ 2-R0.7 8˚ 0.15 2-0.7 max. 2-0.5±0.1 (1.5) Applications Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.5±0.1 2 1 2.
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