BLC10G18XS-552AVT Datasheet - Ampleon

BLC10G18XS-552AVT Power LDMOS transistor

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V; IDq = 950 mA (main); VGS(amp)peak = 1.1 V, unles.

BLC10G18XS-552AVT Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent digital pre-distortion capability

* Intern

BLC10G18XS-552AVT-Ampleon.pdf