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Ampleon

BLC10G18XS-552AVT Datasheet Preview

BLC10G18XS-552AVT Datasheet

Power LDMOS transistor

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BLC10G18XS-552AVT
Power LDMOS transistor
Rev. 1 — 31 October 2019
Product data sheet
1. Product profile
1.1 General description
550 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V;
IDq = 950 mA (main); VGS(amp)peak = 1.1 V, unless otherwise specified.
Test signal
f
VDS
PL(AV) Gp
D
ACPR
(MHz)
(V)
(dBm) (dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
30
49.5
16.8
48.3
32.1 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to
1880 MHz frequency range




Ampleon

BLC10G18XS-552AVT Datasheet Preview

BLC10G18XS-552AVT Datasheet

Power LDMOS transistor

No Preview Available !

BLC10G18XS-552AVT
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
Pinning
Description
drain2 (peak)
drain1 (main)
gate1 (main)
gate2 (peak)
source
video decoupling (peak)
video decoupling (main)
[1] Connected to flange.
3. Ordering information
Simplified outline
72
3
[1]
16
5
4
Graphic symbol
2, 7
3
5
4
1, 6
aaa-014884
Table 3. Ordering information
Type number
Package
Name Description
BLC10G18XS-552AVT -
air cavity plastic earless flanged package; 6 leads
Version
SOT1258-4
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VGS(amp)main
VGS(amp)peak
Tstg
Tj
Tcase
drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
junction temperature
case temperature
operating
Min
-
6
6
65
[1] -
[1] 40
Max
65
+9
+9
+150
225
+125
Unit
V
V
V
C
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-c)
thermal resistance from junction
to case
VDS = 30 V; IDq = 950 mA (main);
VGS(amp)peak = 1.03 V; Tcase = 80 C
PL = 115 W
PL = 145 W
Typ Unit
0.21 k/W
0.19 k/W
BLC10G18XS-552AVT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2019
© Ampleon Netherlands B.V. 2019. All rights reserved.
2 of 13


Part Number BLC10G18XS-552AVT
Description Power LDMOS transistor
Maker Ampleon
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