BLC10G18XS-552AVT
Power LDMOS transistor
Rev. 1 — 31 October 2019
Product data sheet
1. Product profile
1.1 General description
550 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V;
IDq = 950 mA (main); VGS(amp)peak = 1.1 V, unless otherwise specified.
Test signal
f
VDS
PL(AV) Gp
D
ACPR
(MHz)
(V)
(dBm) (dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
30
49.5
16.8
48.3
32.1 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to
1880 MHz frequency range
