BLC10G18XS-550AVT Datasheet | Ampleon

Power LDMOS transistor Rev. 1 - 21 December 2017 Product data sheet 1. Product profile 1.1 General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 800 m A (main); VGS(amp)peak = 0.95 V, unless otherwise specified. Test signal f PL(AV) Gp D ACPR (MHz) (V) (W) (d B) (%) (d Bc) 1-carrier W-CDMA 1805 to 1880 - 29.4 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 d B at 0.01 % probability on CCDF. 1.2 Features and benefits - Excellent ruggedness - High efficiency - Low thermal resistance providing excellent thermal stability - Lower output capacitance for improved performance in Doherty applications - Designed for low memory effects providing excellent...