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BLC10G18XS-552AVT - Power LDMOS transistor

General Description

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLC10G18XS-552AVT
Manufacturer Ampleon
File Size 1.19 MB
Description Power LDMOS transistor
Datasheet download datasheet BLC10G18XS-552AVT Datasheet

Full PDF Text Transcription (Reference)

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BLC10G18XS-552AVT Power LDMOS transistor Rev. 1 — 31 October 2019 Product data sheet 1. Product profile 1.1 General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V; IDq = 950 mA (main); VGS(amp)peak = 1.1 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 30 49.5 16.8 48.3 32.1 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on CCDF. 1.