BLC10G18XS-552AVT Datasheet | Ampleon

Power LDMOS transistor Rev. 1 - 31 October 2019 Product data sheet 1. Product profile 1.1 General description 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V; IDq = 950 m A (main); VGS(amp)peak = 1.1 V, unless otherwise specified. Test signal f PL(AV) Gp D ACPR (MHz) (V) (d Bm) (d B) (%) (d Bc) 1-carrier W-CDMA 1805 to 1880 - 32.1 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 d B at 0.01 % probability on CCDF. 1.2 Features and benefits - Excellent ruggedness - High efficiency - Low thermal resistance providing excellent thermal stability - Lower output capacitance for improved performance in Doherty applications - Designed for low memory effects providing excellent digital pre-distortion capability - Internally matched for ease of use - Integrated ESD protection - For Ro HS pliance see the product details on the Ampleon website 1.3...