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BLF2425M6L180P - Power LDMOS transistor

Description

180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

Table 1.

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLF2425M6L180P
Manufacturer Ampleon
File Size 381.42 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF2425M6L180P Datasheet

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Full PDF Text Transcription

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BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 2450 10 28 180 13.3 D (%) 53.5 1.
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