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Ampleon

BLF6G10LS-200RN Datasheet Preview

BLF6G10LS-200RN Datasheet

Power LDMOS transistor

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BLF6G10-200RN;
BLF6G10LS-200RN
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 28.5
ACPR
(dBc)
39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
Average output power = 40 W
Power gain = 20 dB
Efficiency = 28.5 %
ACPR = 39 dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)




Ampleon

BLF6G10LS-200RN Datasheet Preview

BLF6G10LS-200RN Datasheet

Power LDMOS transistor

No Preview Available !

BLF6G10(LS)-200RN
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 700 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G10-200RN (SOT502A)
1 drain
2 gate
3 source
BLF6G10LS-200RN (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
11
[1] 3
22
3
sym112
11
[1] 3
22
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF6G10-200RN -
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLF6G10LS-200RN -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- 49 A
65 +150 C
- 225 C
BLF6G10-200RN_10LS-200RN#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 12


Part Number BLF6G10LS-200RN
Description Power LDMOS transistor
Maker Ampleon
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