BLF6G10LS-200RN - Power LDMOS transistor

Ampleon

Download the BLF6G10LS-200RN datasheet PDF. This datasheet also covers the BLF6G10-200RN variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

BLF6G10LS-200RN power ldmos transistor by Ampleon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BLF6G10-200RN-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BLF6G10LS-200RN
Manufacturer	Ampleon
File Size	363.92 KB
Description	Power LDMOS transistor
Datasheet	BLF6G10LS-200RN Datasheet

General Description

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Overview

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev.

3 — 1 September 2015 Product data sheet 1.

Product profile 1.

Key Features

Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:.
Average output power = 40 W.
Power gain = 20 dB.
Efficiency = 28.5 %.
ACPR = 39 dBc.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	BLF6G10LS-200R	Power LDMOS transistor	NXP Semiconductors
	BLF6G10LS-200	Power LDMOS transistor	NXP Semiconductors

More Datasheets from Ampleon

Part Number	Description
BLF6G10-200RN	Power LDMOS transistor
BLF6G13L-250P	Power LDMOS transistor
BLF6G13LS-250P	Power LDMOS transistor
BLF6G13LS-250PG	Power LDMOS transistor
BLF6G15L-500H	Power LDMOS transistor
BLF6G15LS-250PBRN	Power LDMOS transistor
BLF6G15LS-500H	Power LDMOS transistor
BLF6G20-180RN	Power LDMOS transistor
BLF6G20-45	Power LDMOS transistor
BLF6G20LS-180RN	Power LDMOS transistor