| Part number | BLF6G10LS-200R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 135.33 KB |
| Description | Power LDMOS transistor |
| Datasheet | BLF6G10LS-200R_NXPSemiconductors.pdf |
|
|
.. BLF6G10LS-200R Power LDMOS transistor Rev. 01 — 21 January 2008 Preliminary data sheet 1. Product profile 1.1 General 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27.5 ACPR (dBc)...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLF6G10LS-200RN | Power LDMOS transistor | Ampleon |
| Part Number | Description |
|---|---|
| BLF6G10LS-200 | Power LDMOS transistor |
| BLF6G10LS-135R | Power LDMOS transistor |
| BLF6G10L-40BRN | Power LDMOS transistor |
| BLF6G20-110 | Power LDMOS transistor |
| BLF6G20-180PN | Power LDMOS transistor |
| BLF6G20-230PRN | Power LDMOS transistor |
| BLF6G20LS-110 | Power LDMOS transistor |
| BLF6G20LS-140 | Power LDMOS transistor |
| BLF6G22-45 | Power LDMOS transistor |
| BLF6G22LS-100 | Power LDMOS transistor |
