BLF6G10LS-200R Description
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27.5 ACPR (dBc) −40[1] Test signal:.