BLF6G10LS-200RN Overview
BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 ACPR...
BLF6G10LS-200RN Key Features
- Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400
- Average output power = 40 W
- Power gain = 20 dB
- Efficiency = 28.5 %
- ACPR = 39 dBc
