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BLF6G10LS-200RN - Power LDMOS transistor

This page provides the datasheet information for the BLF6G10LS-200RN, a member of the BLF6G10-200RN Power LDMOS transistor family.

Product Overview

Ampleon

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BLF6G10LS-200RN Power LDMOS transistor by Ampleon - Datasheet Preview — Datasheet preview – BLF6G10LS-200RN

Datasheet Details

Part number	BLF6G10LS-200RN
Manufacturer	Ampleon
File Size	363.92 KB
Description	Power LDMOS transistor
Datasheet	BLF6G10LS-200RN Datasheet
Additional preview pages of the BLF6G10LS-200RN datasheet.

BLF6G10LS-200RN Product details

Description

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:.
Average output power = 40 W.
Power gain = 20 dB.
Efficiency = 28.5 %.
ACPR = 39 dBc.

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Published: Apr 26, 2018 |