BLF6G10LS-200RN
BLF6G10LS-200RN is Power LDMOS transistor manufactured by Ampleon.
- Part of the BLF6G10-200RN comparator family.
- Part of the BLF6G10-200RN comparator family.
BLF6G10-200RN; BLF6G10LS-200RN
Power LDMOS transistor
Rev. 3
- 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation f
PL(AV)
Gp
D
(MHz)
(V) (W)
(d B) (%)
2-carrier W-CDMA
869 to 894
28 40
20 28.5
ACPR (d Bc)
- 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION
This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
- Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 m A:
- Average output power = 40 W
- Power gain = 20 d...
