Datasheet Details
| Part number | BLF6G10LS-200RN |
|---|---|
| Manufacturer | Ampleon |
| File Size | 363.92 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLF6G10LS-200RN Datasheet
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General Description
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Key Features
- Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:.
- Average output power = 40 W.
- Power gain = 20 dB.
- Efficiency = 28.5 %.
- ACPR = 39 dBc.