BLF6G20LS-180RN, BLF6G20-180RN Datasheet - Ampleon

BLF6G20LS-180RN Power LDMOS transistor

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 (MHz) (V) (W) (dB) (%) (dBc) 2-carrier WC.

BLF6G20LS-180RN Features

* Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:

* Average output power = 40 W

* Power gain = 17.2 dB

* Efficiency = 27 %

* IMD3 = 41 dBc

* ACPR = 38 dBc

* Easy power control

* Integrated

BLF6G20-180RN-Ampleon.pdf

BLF6G20LS-180RN Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G20LS-180RN, BLF6G20-180RN. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

BLF6G20LS-180RN, BLF6G20-180RN

Manufacturer:

Ampleon

File Size:

1.09 MB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF6G20LS-180RN, BLF6G20-180RN.
Please refer to the document for exact specifications by model.

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