| Part Number | BLF6G20LS-180RN Datasheet |
|---|---|
| Manufacturer | Ampleon |
| Overview |
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production tes.
* Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: * Average output power = 40 W * Power gain = 17.2 dB * Efficiency = 27 % * IMD3 = 41 dBc * ACPR = 38 dBc * Easy power control * Integrated ESD protection * Enhanced rugged. |
BLF6G20LS-180RN Datasheet and Specifications PDF
The BLF6G20LS-180RN is a Power LDMOS transistor.
| Part Number | BLF6G20LS-180RN Datasheet |
|---|---|
| Description | Power LDMOS Transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test .
I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efficiency = 27 % N IMD3 = *41 dBc N ACPR = *38 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedn. |