BLF6G20LS-180RN Description
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.
BLF6G20LS-180RN Key Features
- Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400
- Average output power = 40 W
- Power gain = 17.2 dB
- Efficiency = 27 %
- IMD3 = 41 dBc
- ACPR = 38 dBc
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency