BLF6G20LS-180RN - Power LDMOS transistor

This page provides the datasheet information for the BLF6G20LS-180RN, a member of the BLF6G20-180RN Power LDMOS transistor family.

Product Overview

Ampleon

Part number	BLF6G20LS-180RN
Manufacturer	Ampleon
File Size	1.09 MB
Description	Power LDMOS transistor
Datasheet	BLF6G20LS-180RN Datasheet
Additional preview pages of the BLF6G20LS-180RN datasheet.

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:.
Average output power = 40 W.
Power gain = 17.2 dB.
Efficiency = 27 %.
IMD3 = 41 dBc.
ACPR = 38 dBc.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1800 MHz to 2000 MHz).
Internally matched for ease of use.

Other Datasheets by Ampleon

Published: Jan 28, 2020 |