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Ampleon

BLF7G20LS-200 Datasheet Preview

BLF7G20LS-200 Datasheet

Power LDMOS transistor

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BLF7G20L-200;
BLF7G20LS-200
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1990 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
1620 28 55
18 33 29 [1]
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1990 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low-memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi-carrier applications in the
1805 MHz to 1990 MHz frequency range




Ampleon

BLF7G20LS-200 Datasheet Preview

BLF7G20LS-200 Datasheet

Power LDMOS transistor

No Preview Available !

BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF7G20L-200 (SOT502A)
1 drain
2 gate
3 source
BLF7G20LS-200 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Graphic symbol
11
[1] 3
22
3
sym112
1
3
[1]
2
1
2
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF7G20L-200
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLF7G20LS-200 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
5. Thermal characteristics
Min Max Unit
- 65 V
0.5 +13 V
65 +150 C
- 225 C
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Tcase = 80 C; PL = 55 W;
VDS = 28 V; IDq = 1620 mA
Typ Unit
0.27 K/W
BLF7G20L-200_7G20LS-200#5
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 13


Part Number BLF7G20LS-200
Description Power LDMOS transistor
Maker Ampleon
Total Page 13 Pages
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