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BLF8G22LS-200GV, BLF8G22LS-200V Power LDMOS transistor

BLF8G22LS-200GV Description

BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

BLF8G22LS-200GV Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation
* Decoupling leads to enable improved video bandwidth (80 MHz typical)

BLF8G22LS-200GV Applications

* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BLF8G22LS-200GV, BLF8G22LS-200V. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF8G22LS-200GV, BLF8G22LS-200V
Manufacturer
Ampleon
File Size
424.63 KB
Datasheet
BLF8G22LS-200V-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF8G22LS-200GV, BLF8G22LS-200V.
Please refer to the document for exact specifications by model.

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Power LDMOS transistor Ampleon
Ampleon BLF8G22LS-200GV-like datasheet