BLF8G22LS-200GV Overview
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit, tested on straight lead device. PAR = 8.4 dB at 0.01 % probability on CCDF;.
BLF8G22LS-200GV Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation
- Decoupling leads to enable improved video bandwidth (80 MHz typical)
- Lower output capacitance for improved performance in Doherty