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BLF8G22LS-200V - Power LDMOS transistor

Datasheet Summary

Description

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation.
  • Decoupling leads to enable improved video bandwidth (80 MHz typical).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF8G22LS-200V
Manufacturer Ampleon
File Size 424.63 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G22LS-200V Datasheet
Additional preview pages of the BLF8G22LS-200V datasheet.

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Full PDF Text Transcription

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BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 2000 28 55 19.0 29 30 [1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing. 1.
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