BLF8G22LS-200V
BLF8G22LS-200V is Power LDMOS transistor manufactured by Ampleon.
description
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit, tested on straight lead device.
Test signal f
IDq
VDS PL(AV)
Gp
D ACPR5M
(MHz)
(m A) (V) (W)
(d B) (%) (d Bc)
2-carrier W-CDMA
2110 to 2170 2000 28 55
19.0 29
- 30 [1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 d B at 0.01 % probability on CCDF; 5 MHz carrier spacing.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation
- Decoupling leads to enable improved video bandwidth (80 MHz typical)
- Lower output capacitance for improved performance in Doherty applications
-...
