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BLF8G22LS-220 - Power LDMOS transistor

Description

220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for low memory effects providing excellent pre-distortability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLF8G22LS-220

Datasheet Details

Part number BLF8G22LS-220
Manufacturer Ampleon
File Size 348.65 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G22LS-220 Datasheet
Additional preview pages of the BLF8G22LS-220 datasheet.

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Full PDF Text Transcription

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BLF8G22LS-220 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1620 28 55 17 33 30[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.
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