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BLF9G38-10G Datasheet - Ampleon

Power LDMOS transistor

BLF9G38-10G Features

* High efficiency

* Integrated ESD protection

* Excellent ruggedness

* Excellent thermal stability

* Designed for broadband operation

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applic

BLF9G38-10G General Description

10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) .

BLF9G38-10G Datasheet (464.77 KB)

Preview of BLF9G38-10G PDF

Datasheet Details

Part number:

BLF9G38-10G

Manufacturer:

Ampleon

File Size:

464.77 KB

Description:

Power ldmos transistor.

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TAGS

BLF9G38-10G Power LDMOS transistor Ampleon

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