Datasheet4U Logo Datasheet4U.com

BLL6H1214L-250 Datasheet - Ampleon

LDMOS L-band radar power transistor

BLL6H1214L-250 Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:

* Output power = 250 W

* Power gain = 17 dB

* Efficiency = 55 %

* Easy power control

* Integrated ESD protection

* High flexibi

BLL6H1214L-250 General Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V.

BLL6H1214L-250 Datasheet (354.19 KB)

Preview of BLL6H1214L-250 PDF

Datasheet Details

Part number:

BLL6H1214L-250

Manufacturer:

Ampleon

File Size:

354.19 KB

Description:

Ldmos l-band radar power transistor.
BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 Gen.

📁 Related Datasheet

BLL6H1214L-250 LDMOS L-band Radar Power Transistor (NXP)

BLL6H1214LS-250 LDMOS L-band radar power transistor (Ampleon)

BLL6H1214LS-250 LDMOS L-band Radar Power Transistor (NXP)

BLL6H1214LS-500 LDMOS L-band radar power transistor (Ampleon)

BLL6H1214-500 LDMOS L-band radar power transistor (Ampleon)

BLL6H1214-500 LDMOS L-band radar power transistor (NXP Semiconductors)

BLL6H1214P2S-250 LDMOS L-band radar power module (Ampleon)

BLL6H1214P2S-250 LDMOS L-band radar power module (NXP)

BLL6H0514-25 LDMOS driver transistor (Ampleon)

BLL6H0514-25 LDMOS Driver Transistor (NXP)

TAGS

BLL6H1214L-250 LDMOS L-band radar power transistor Ampleon

Image Gallery

BLL6H1214L-250 Datasheet Preview Page 2 BLL6H1214L-250 Datasheet Preview Page 3

BLL6H1214L-250 Distributor