| Part Number | BLL6H1214L-250 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100.
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 % * Easy power control * Integrated ESD protection * High flexibility with respect to pulse f. |
BLL6H1214L-250 Datasheet
The BLL6H1214L-250 is a LDMOS L-band Radar Power Transistor.
| Part Number | BLL6H1214L-250 |
|---|---|
| Description | LDMOS L-band radar power transistor |
| Manufacturer | Ampleon |
| Overview |
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 10.
and benefits
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with of 10 %: * Output power = 250 W * Power gain = 17 dB * Efficiency = 55 % * Easy power control * Integrated ESD protection * High flexibility with r. |