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BLL8H1214L-500 Datasheet - Ampleon

LDMOS L-band radar power transistor

BLL8H1214L-500 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1.2 GHz to 1.4 GHz)

* Internally matched for ease of

BLL8H1214L-500 General Description

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W.

BLL8H1214L-500 Datasheet (480.54 KB)

Preview of BLL8H1214L-500 PDF

Datasheet Details

Part number:

BLL8H1214L-500

Manufacturer:

Ampleon

File Size:

480.54 KB

Description:

Ldmos l-band radar power transistor.
BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 Gen.

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BLL8H1214L-500 LDMOS L-band radar power transistor Ampleon

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