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BLM10D1822-60ABG Datasheet Preview

BLM10D1822-60ABG Datasheet

LDMOS 2-stage integrated Doherty MMIC

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BLM10D1822-60ABG
LDMOS 2-stage integrated Doherty MMIC
Rev. 2 — 19 December 2019
Product data sheet
1. Product profile
1.1 General description
The BLM10D1822-60ABG is a 2-stage fully integrated Doherty MMIC solution using
Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device,
input splitter and output combiner are integrated in a single package. This multiband
device is perfectly suited as general purpose driver or mMIMO final in the frequency range
from 1800 MHz to 2200 MHz. Available in gull wing.
Table 1. Performance
Typical RF performance at Tcase = 25 C; Typical RF performance at Tcase = 25 C; IDq = 90 mA
(driver and final stages); VGS = 2.11 V (carrier stage); VGS = 1.84 V (peaking stage). Test signal:
1-carrier LTE; carrier spacing = 20 MHz; PAR = 7.6 dB at 0.01 % probability on CCDF.
Test signal
f
VDS PL(AV)
Gp
D ACPR20M
(MHz) (V) (W)
(dB) (%) (dBc)
1-carrier LTE 20 MHz
2000 28 10
27.5 42 32
1.2 Features and benefits
Integrated input splitter
Integrated output combiner
High efficiency
Designed for broadband operation (frequency 1800 MHz to 2200 MHz)
Independent control of carrier and peaking bias
Integrated ESD protection
Excellent thermal stability
Source impedance 50 ; high power gain
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base
stations in the 1800 MHz to 2200 MHz frequency range




Ampleon

BLM10D1822-60ABG Datasheet Preview

BLM10D1822-60ABG Datasheet

LDMOS 2-stage integrated Doherty MMIC

No Preview Available !

2. Pinning information
2.1 Pinning
BLM10D1822-60ABG
LDMOS 2-stage integrated Doherty MMIC
RF_OUT VDS2
8
pin 1 index
1
7
Fig 1.
amp01110
Transparent top view
The exposed backside of the package is the ground terminal of the device.
Pin configuration
2.2 Pin description
Table 2. Pin description
Symbol
Pin
VDS1
1
VGS(P)
2
VGS(C)
3
RF_IN
4
VGS(C)
VGS(P)
VDS1
RF_OUT/VDS2
GND
5
6
7
8
flange
Description
drain-source voltage of driver stages
gate-source voltage of peaking P
gate-source voltage of carrier C
RF input
gate-source voltage of carrier C
gate-source voltage of peaking P
drain-source voltage of driver stages
RF output / drain-source voltage of final stages
RF ground
3. Ordering information
Table 3. Ordering information
Type number
Package
Name Description
BLM10D1822-60ABG
plastic, heatsink small outline package; 8 leads
Version
OMP-400-8G-1
BLM10D1822-60ABG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 19 December 2019
© Ampleon Netherlands B.V. 2019. All rights reserved.
2 of 17


Part Number BLM10D1822-60ABG
Description LDMOS 2-stage integrated Doherty MMIC
Maker Ampleon
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