BLP10H660P transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
* Excellent ruggedness
* H.
in the HF to 1000 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
720
VDS
PL
(V) (W)
.
A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
720
VDS
PL
(V) (W)
50 60
Gp (dB) 18
D (%) 72
1.2 Features and benefits
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