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BLP10H660PG - Power LDMOS transistor

This page provides the datasheet information for the BLP10H660PG, a member of the BLP10H660P Power LDMOS transistor family.

Datasheet Summary

Description

A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.

Table 1.

Features

  • Easy power control.
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 1000 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLP10H660PG

Datasheet Details

Part number BLP10H660PG
Manufacturer Ampleon
File Size 962.36 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP10H660PG Datasheet
Additional preview pages of the BLP10H660PG datasheet.

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Full PDF Text Transcription

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BLP10H660P; BLP10H660PG Power LDMOS transistor Rev. 1 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 720 VDS PL (V) (W) 50 60 Gp (dB) 18 D (%) 72 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1000 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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