BLP10H660P Overview
A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Application information Test signal f (MHz) pulsed RF 720 VDS PL (V) (W) 50 60 Gp (dB) 18 D (%) 72 1.2.
BLP10H660P Key Features
- Easy power control
- Integrated dual sided ESD protection enables class C operation and plete switch
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 1000 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances