Datasheet Summary
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 3
- 1 September 2015
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation f
VDS PL
Gp D tr tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns) pulsed RF
3.1 to 3.5 32
11 43
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
- Typical pulsed RF...
