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BLS6G3135S-120, BLS6G3135-120 Datasheet - Ampleon

BLS6G3135S-120 LDMOS S-Band radar power transistor

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W.

BLS6G3135S-120 Features

* Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:

* Output power = 120 W

* Gain = 11 dB

* Efficiency = 43 %

* Easy power control

* Integrated ESD protection

* Excellent ru

BLS6G3135S-120, BLS6G3135-120 Datasheet

This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLS6G3135S-120, BLS6G3135-120

Manufacturer:

Ampleon

File Size:

371.09 KB

Description:

Ldmos s-band radar power transistor.

This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120.
Please refer to the document for exact specifications by model.

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