Datasheet Details
| Part number | BLS6G3135S-120 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 371.09 KB |
| Description | LDMOS S-Band radar power transistor |
| Datasheet |
 BLS6G3135S-120 Datasheet
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Description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Features
- Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with of 10 %:.
- Output power = 120 W.
- Gain = 11 dB.
- Efficiency = 43 %.
- Easy power control.
- Integrated ESD protection.
- Excellent ruggedness.
- High efficiency.