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Ampleon

BLS6G3135S-120 Datasheet Preview

BLS6G3135S-120 Datasheet

LDMOS S-Band radar power transistor

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BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
3.1 to 3.5 32
120
11 43
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of up to 300 s with of 10 %:
Output power = 120 W
Gain = 11 dB
Efficiency = 43 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)




Ampleon

BLS6G3135S-120 Datasheet Preview

BLS6G3135S-120 Datasheet

LDMOS S-Band radar power transistor

No Preview Available !

BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2. Pinning
Pin Description
BLS6G3135-120 (SOT502A)
1 drain
2 gate
3 source
BLS6G3135S-120 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
11
[1] 3
22
3
sym112
11
[1] 3
22
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
Version
BLS6G3135-120 -
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLS6G3135S-120 -
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Min
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
-
0.5
-
65
-
Max
60
+13
7.2
+150
225
Unit
V
V
A
C
C
BLS6G3135-120_6G3135S-120#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 13


Part Number BLS6G3135S-120
Description LDMOS S-Band radar power transistor
Maker Ampleon
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