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BLS8G2731LS-400P Datasheet - Ampleon

LDMOS S-band radar power transistor

BLS8G2731LS-400P Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

BLS8G2731LS-400P General Description

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp [1] D [1] PL(2dB) .

BLS8G2731LS-400P Datasheet (363.99 KB)

Preview of BLS8G2731LS-400P PDF

Datasheet Details

Part number:

BLS8G2731LS-400P

Manufacturer:

Ampleon

File Size:

363.99 KB

Description:

Ldmos s-band radar power transistor.
BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 G.

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TAGS

BLS8G2731LS-400P LDMOS S-band radar power transistor Ampleon

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