AF2301P Description
Gate Source Drain Ordering information A X 2301P X X.
AF2301P Key Features
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Excellent thermal and electrical capabilities
- pact and low profile SOT-23 package
- 20V RDS (on), VGS@-4.5V, IDS@-2.8A =130mΩ. RDS (on), VGS@-2.5V, IDS@-2.0A =190mΩ