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AF2301P - 20V P-Channel Enhancement Mode MOSFET

Description

Pin Pin No.

Features

  • Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = - 20V RDS (on), VGS@-4.5V, IDS@-2.8A =130mΩ. RDS (on), VGS@-2.5V, IDS@-2.0A =190mΩ. Pin Assignments 3 12 (Top View) 1. G 2. S 3. D Pin.

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Datasheet Details

Part number AF2301P
Manufacturer Anachip
File Size 132.00 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AF2301P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V P-Channel Enhancement Mode MOSFET AF2301P Features Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = - 20V RDS (on), VGS@-4.5V, IDS@-2.8A =130mΩ. RDS (on), VGS@-2.5V, IDS@-2.0A =190mΩ. Pin Assignments 3 12 (Top View) 1. G 2. S 3. D Pin Descriptions Pin Pin No. Name 1G 2S 3D Description Gate Source Drain Ordering information A X 2301P X X X Feature PN Package Lead Free Packing F :MOSFET W: SOT23 Blank : Normal Blank : Tube or Bulk L : Lead Free Package A : Tape & Reel Block Diagram DS G This datasheet contains new product information. Anachip Corp.
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