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AF2302N - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

Pin No.

Features

  • - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = 20V RDS (on), VGS@4.5V, IDS@3.6A =65mΩ. RDS (on), VGS@2.5V, IDS@3.1A =95mΩ. Pin Assignments 3 (Top View) 1. G 2. S 3. D Pin.

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Datasheet Details

Part number AF2302N
Manufacturer Anachip
File Size 132.04 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AF2302N Datasheet
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AF2302N 20V N-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = 20V RDS (on), VGS@4.5V, IDS@3.6A =65mΩ. RDS (on), VGS@2.5V, IDS@3.1A =95mΩ. Pin Assignments 3 (Top View) 1. G 2. S 3. D Pin Descriptions Pin No. 1 2 3 Pin Name G S D Description Gate Source Drain 1 2 Ordering information A X Feature F :MOSFET PN 2302N X X X Package W: SOT23 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice.
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