Datasheet Summary
20V P-Channel Enhancement Mode MOSFET
Features
Product Summary
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Excellent thermal and electrical capabilities
- pact and low profile SOT-23 package
VDS =
- 20V RDS (on), VGS@-4.5V, IDS@-2.8A =130mΩ. RDS (on), VGS@-2.5V, IDS@-2.0A =190mΩ.
Pin Assignments
3 12
(Top View)
1. G 2. S 3. D
Pin Descriptions
Pin Pin No. Name
1G
2S
3D
Description
Gate Source Drain
Ordering information
A X 2301P X X X
Feature
PN Package
Lead Free
Packing
F :MOSFET
W: SOT23 Blank : Normal
Blank : Tube or Bulk
L : Lead Free Package A : Tape &...