ADG636 - 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

Analog Devices

General Description

The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches.

When on, each switch conducts equally well in both directions.

Key Features

1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range:.
40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (.

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ADG636 1 pc charge injection/ 100 pa leakage cmos 5 v/+5 v/+3 v dual spdt switch by Analog Devices - Datasheet Preview

Datasheet Details

Part number	ADG636
Manufacturer	Analog Devices
File Size	147.68 KB
Description	1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch
Datasheet	ADG636 Datasheet

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ADG608	3 V/5 V/ 4/8 Channel High Performance Analog Multiplexers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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a 1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM ADG636 S1A 4 6 FEATURES 1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range: –40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (<0.