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GaAs pHEMT process Low Control Voltage Operation : 0/+3.3 V Low Insertion Loss : 0.45 dB at 2.5 GHz and 0.6 dB at 5.8 GHz High Isolation : 26 ...
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High Isolation: >40 dB @ 20 GHz Low Insertion Loss: 2.1 dB @ 20 GHz Non-Reflective Design Small Size: 1.22 x 0.85 x 0.1 mm
General Description
The HMC...
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n Integral TTL Driver n Low DC Power Consumption n Fast Switching Speed: 7 ns Typical n Surface Mount Package n 50 Ohm Nominal Impedance n MIL-STD-883...
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◆ Advanced Silicon Process ◆ Frequency Range : 0.1 – 3.0 GHz ◆ Low Control Voltage : 1.6 ~ 3.3 V ◆ Low Insertion Loss : 0.45 dB @ 2.45 GHz ◆ High Isol...
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• CMOS Technology for Bus and Analog Applications • Low On-Resistance: 2Ω at 3.0V • Wide VCC Range: +1.8V to +5.5V • Low Power Consumption : 5µW • Rai...
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ÇÇ Frequency Range : 0.5 – 6.0 GHz ÇÇ 1.8 V or 3.3 V Single Supply Voltage ÇÇ Low Control Voltage : 2.4 ~ 3.6 V ÇÇ Low Insertion Loss:
–– 0.65 dB @ 2....
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Broadband Performance: DC - 4.0 GHz Low Insertion Loss: 0.5 dB @ 2.0 GHz High IIP3: +48 dBm Small Size: 0.70 mm x 0.70 mm x 0.13 mm
Typical Applicati...
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• Broad frequency support from 9 kHz to 26.5 GHz • High port to port isolation
▪ 63 dB @ 3 GHz ▪ 58 dB @ 7.5 GHz ▪ 39 dB @ 13.5 GHz ▪ 28 dB @ 20 GHz ▪...
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+1.8 V to +5.5 V Single Supply 2.5 ⍀ (Typ) On Resistance Low On-Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 10-Lead SOIC Pac...
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11 Hits
• 10 MHz to 3 GHz operation • 0.25 dB insertion loss at 1 GHz • > 27 dB isolation at 3 GHz • 30 dBm P1dB at 3 V • 50 dBm IP3 at 3 V
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