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SOT23-6L - LOW VOLTAGE 4ohm SPDT SWITCH

General Description

The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology.

It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications.

5V 25oC.

Key Features

  • are fast switching speed (t ON=7ns, tOFF=4.5ns) and Low Power Consumption (.

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Other Datasheets by STMicroelectronics

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SOT23 LOW VOLTAGE 4ohm SPDT SWITCH
SOT323-6L LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® STG719 LOW VOLTAGE 4Ω SPDT SWITCH s s s s HIGH SPEED: tPD = 0.3 ns (TYP.) at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.0V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 85 oC LOW ”ON” RESISTANCE: RON = 4Ω (MAX. Ta=25oC) AT VCC = 5V RON = 6Ω (TYP.) AT VCC = 3.0V WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 1.8V to 5.5V SINGLE SUPPLY SOT23-6L ORDER CODES PACKAGE SOT23-6L T UBE T& R STG719FTR DESCRIPTION The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25oC. Additional key features are fast switching speed (t ON=7ns, tOFF=4.5ns) and Low Power Consumption (<0.01µW Typ.).