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Analog Devices Semiconductor Electronic Components Datasheet

ADG819 Datasheet

0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

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a
0.5 CMOS
1.8 V to 5.5 V 2:1 Mux/SPDT Switches
ADG819/ADG820
FEATURES
Low On Resistance 0.8 Max at 125؇C
0.25 Max On Resistance Flatness
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40؇C to +125؇C
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead SOIC Package, and
6-Bump MicroCSP (Micro Chip Scale Package) ADG819
Fast Switching Times
Typical Power Consumption (<0.01 W)
TTL-/CMOS-Compatible Inputs
Pin Compatible with the ADG719 (ADG819)
APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement
FUNCTIONAL BLOCK DIAGRAM
ADG819/
ADG820
S2
D
S1
IN
SWITCHES SHOWN
FOR A LOGIC “1” INPUT
GENERAL DESCRIPTION
The ADG819 and the ADG820 are monolithic, CMOS, SPDT
(single-pole, double-throw) switches. These switches are designed
on a submicron process that provides low power dissipation yet
gives high switching speed, low On resistance, and low leakage
currents.
Low power consumption and an operating supply range of 1.8 V
to 5.5 V make the ADG819 and ADG820 ideal for battery-pow-
ered, portable instruments.
Each switch of the ADG819 and the ADG820 conducts equally
well in both directions when on. The ADG819 exhibits break-
before-make switching action, thus preventing momentary shorting
when switching channels. The ADG820 exhibits make-before-
break action.
The ADG819 and the ADG820 are available in a 6-lead SOT-23
package and an 8-lead µSOIC package. The ADG819 is also
available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP
package. This chip occupies only a 1.14 mm × 2.18 mm area,
making it the ideal candidate for space-constrained applications.
PRODUCT HIGHLIGHTS
1. Very low ON resistance, 0.5 typical
2. 1.8 V to 5.5 V single-supply operation
3. High current carrying capability
4. Tiny 6-lead SOT-23 package, 8-lead µSOIC package,
and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package
(ADG819 only)
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002


Analog Devices Semiconductor Electronic Components Datasheet

ADG819 Datasheet

0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

No Preview Available !

ADG819/ADG820–SPECIFICATIONS1 (VDD= 5 V ؎ 10%, GND = 0 V.)
Parameter
25؇C
–40؇C to –40؇C to
+85؇C +125؇C2
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
ON Resistance (RON)
0 V to VDD V
0.5
typ
VS = 0 V to VDD, IS = 100 mA;
0.6 0.7 0.8
max Test Circuit 1
ON Resistance Match Between
Channels (RON)
0.06
0.08 0.1 0.12
typ
max
VS = 0 V to VDD, IS = 100 mA
ON Resistance Flatness (RFLAT(ON))
0.1
0.17 0.2 0.25
typ
max
VS = 0 V to VDD, IS = 100 mA
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Channel ON Leakage ID, IS (ON)
± 0.01
± 0.25
± 0.01
± 0.25
±3
±3
± 10
± 25
nA typ
nA max
nA typ
nA max
VDD = 5.5 V
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = VD = 1 V, or VS = VD = 4.5 V;
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS3
ADG819
tON
tOFF
Break-Before-Make Time Delay, tBBM
ADG820
tON
tOFF
Make-Before-Break Time Delay, tMBB
Charge Injection
0.005
5
35
45
10
16
5
10
18
26
40
15
20
Off Isolation
–71
Channel-to-Channel Crosstalk
–72
Bandwidth –3 dB
CS (OFF)
CD, CS (ON)
POWER REQUIREMENTS
17
80
300
IDD 0.001
50
18
20
45
1.0
2.0
0.8
± 0.1
55
21
1
22
50
1
2.0
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
ns typ
ns max
ns typ
ns max
ns typ
ns min
RL = 50 , CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 50 , CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 50 , CL = 35 pF,
VS1 = VS2 = 3 V; Test Circuit 5
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
RL = 50 , CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 50 , CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 50 , CL = 35 pF,
VS = 0 V; Test Circuit 6
VS = 2.5 V, RS = 0 Ω, CL = 1 nF;
Test Circuit 7
RL = 50 , CL = 5 pF, f = 100 kHz;
Test Circuit 8
RL = 50 , CL = 5 pF, f = 100 kHz;
Test Circuit 10
RL = 50 , CL = 5 pF; Test Circuit 9
f = 1 MHz
f = 1 MHz
VDD = 5.5 V
Digital Inputs = 0 V or 5.5 V
NOTES
1Temperature range is as follows: –40°C to +125°C.
2ON resistance parameters tested with IS = 10 mA.
3Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2– REV. 0


Part Number ADG819
Description 0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches
Maker Analog Devices
Total Page 12 Pages
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