Description
The HMC512LP5 & HMC512LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs..
Features
- Triple Output: Fo = 9.6 - 10.8 GHz Fo/2 = 4.8 - 5.4 GHz Fo/4 = 2.4 - 2.7 GHz
Pout: +9 dBm
Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed
32 Lead 5 x 5 mm SMT Package: 25 mm²
General Description
The HMC512LP5 & HMC512LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC512LP5 & HMC512LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm s.
