Description
The HMC582LP5 & HMC582LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC582LP5 & HMC582LP5E integrate resona-
tors, negative resistance devices, varactor diodes
and feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent over
8
temperature, shock, and process due to the oscillator’s monolithic structure.Power output is +9 dBm typical
from a +5V supply voltage.The prescaler and RF/2
functions can be disabled to conserv
Features
- Triple Output: Fo = 11.1 - 12.4 GHz Fo/2 = 5.55 - 6.2 GHz Fo/4 = 2.78 - 3.1 GHz
Pout: +9 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm²
General.