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HMC669LP3E Datasheet GaAs PHEMT MMIC

Manufacturer: Analog Devices

Download the HMC669LP3E datasheet PDF. This datasheet also includes the HMC669LP3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC669LP3-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC.

The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm IP3 from a single supply of +5V @ 86mA.

Input and output return losses are excellent and no external matching components are required.

Overview

Amplifiers - Low Noise - SMT 7 7-1 HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Typical.

Key Features

  • The HMC669LP3(E) is ideal for: Noise Figure: 1.4 dB.
  • Cellular/3G and LTE/WiMAX/4G Output IP3: +29 dBm.
  • BTS & Infrastructure Gain: 17 dB.
  • Repeaters and Femtocells Failsafe Operation:.
  • Tower Mounted Amplifiers.
  • Test & Measurement Equipment LETE Functional Diagram Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm QFN Package: 9 mm2 General.

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