HMC669LP3E Datasheet - Analog Devices

GaAs PHEMT MMIC

HMC669LP3E Features

* The HMC669LP3(E) is ideal for: Noise Figure: 1.4 dB

* Cellular/3G and LTE/WiMAX/4G Output IP3: +29 dBm

* BTS & Infrastructure Gain: 17 dB

* Repeaters and Femtocells Failsafe Operation:

* Tower Mounted Amplifiers

* Test & Measurement Equipment LETE Fun

HMC669LP3E General Description

The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm IP3 from a single.

HMC669LP3E Datasheet (823.22 KB)

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HMC669LP3E

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Analog Devices ↗

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Description:

Gaas phemt mmic.
Amplifiers - Low Noise - SMT 7 7-1 HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Typical Application.

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HMC669LP3E GaAs PHEMT MMIC Analog Devices

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HMC669LP3E Features

HMC669LP3E General Description

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