Datasheet4U Logo Datasheet4U.com

HMC818LP4E Datasheet GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER

Manufacturer: Analog Devices

General Description

The HMC818LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz.

The amplifier has been optimized to provide 0.85 dB noise figure, 20.5 dB gain and +35 dBm output IP3 from a single supply of +5V.

Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components.

Overview

Amplifiers - Low Noise - SMT 7 7-1 HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.

Key Features

  • The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB.
  • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB.
  • BTS & Infrastructure High OIP3: +35 dBm.
  • Repeaters and Femtocells Single Supply: +3V to +5V.
  • Public Safety Radios LETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16mm² General.