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HMC8410 - Low-Noise Amplifier

General Description

The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.

Key Features

  • Low noise figure: 1.1 dB typical.
  • High gain: 19.5 dB typical.
  • High output third-order intercept (IP3): 33 dBm typical.
  • 6-lead, 2 mm × 2 mm LFCSP package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HMC8410 0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier FEATURES ► Low noise figure: 1.1 dB typical ► High gain: 19.5 dB typical ► High output third-order intercept (IP3): 33 dBm typical ► 6-lead, 2 mm × 2 mm LFCSP package APPLICATIONS ► Software defined radios ► Electronic warfare ► Radar applications GENERAL DESCRIPTION The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.